suface mount package. s mhop microelectronics c orp. a SP3906 symbol v ds v gs i dm w a p d c 6 -55 to 150 i d units parameter 35 5 21 v v 20 t a =25 c gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 35v 5a 131 @ vgs=4.5v 85 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed ac a maximum power dissipation operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw sep,11,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product 4 1.6 e as single pulse avalanche energy d mj 2.5 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja pin1 esd protected. 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 c pdfn 5x6
symbol min typ max units bv dss 35 v 1 i gss 10 ua v gs(th) v 68 g fs s q g 72 nc 174 1258 666 t d(on) 3 ns t r ns t d(off) ns t f ns switching characteristics v dd =17.5v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =2.5a v ds =10v , i d =2.5a r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =28v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics v gs =4.5v , i d =2.0a 85 97 131 m ohm b SP3906 ver 1.0 www.samhop.com.tw sep,11,2014 2 nc q gs nc q gd 0.78 1.3 gate-drain charge gate-source charge v ds =17.5v,i d =2.5a, v gs =10v drain-source diode characteristics and maximum ratings v ds =17.5v,i d =2.5a,v gs =10v v sd diode forward voltage v gs =0v,i s =1a 0.82 1.2 v 1 1.9 3 7.5 notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure12) e.mounted on fr4 board of 1 inch 2 ,2oz. _ _
SP3906 ver 1.0 www.samhop.com.tw sep,11,2014 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 10 8 6 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 10 8 6 4 2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 -55 c 240 200 160 120 80 40 1 2.2 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 2 v gs =10v v gs =4.5v 2.0 v gs =4.5v i d =2.0a v gs =10v i d =2.5a v gs =10v 10 8 6 4 2 0.1 v ds =v gs i d =250ua v gs =4.5v 25 c tj=125 c v gs =3v v gs =3.5v v gs =4v
SP3906 ver 1.0 www.samhop.com.tw sep,11,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current i d , drain current(a) v ds , drain-source voltage(v) figure 11. maximum safe operating area 300 250 200 150 100 50 0 24 6 8 10 0 10 1 00.3 20 1.5 0.6 0.9 1.2 125 c i d =2.5a 75 c 25 c 125 c 0.1 1 10 10 1 0.1 100us 1ms 10ms 100ms dc 100 25 c 75 c 0.01 v gs =10v t a =25 c single pulse v gs , gate to source voltage(v) qg, total gate charge(nc) figure 9. gate charge 10 8 6 4 2 0 0 1.2 2.4 0.6 1.8 3.0 3.6 v ds =17.5v i d =2.5a switching time(ns) rg, gate resistance( ) figure 10. switching characteristics 1 10 100 10 100 1000 60 6 td(off ) vds=17.5v,id=1a vgs=10v tf td(on) tr 3000 r ds (on ) lim i t
SP3906 www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve t p i as figure 12a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 12b. v (br)dss 0.001 0.01 0.1 1 single pulse 0.00001 1000 100 10 1 0.1 0.01 0.001 0.0001 p dm 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datas heet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th t 1 t 2 0.5 0.2 0.1 0.05 0.02 0.01 sep,11,2014 ver 1.0
SP3906 www.samhop.com.tw sep,11,2014 6 package outline dimensions ver 1.0 top view pdfn 5x6-8l bottom view side view symbols millimeters a a1 b c d e e1 min max 0.85 1.00 0.00 0.05 0.30 0.50 0.15 0.25 e l l1 3.82 bsc 0.45 0.00 0 o nom 0.95 0.40 0.20 1.27 bsc 0.15 0 10 o 5.20 bsc 0.50 0.60 0.75 e e1 l1 d e e2 d1 d2 l2 l b a a1 c d2 e2 l2 4.35 bsc 5.55 bsc 6.05 bsc 0.55 0.65 d1 0.68 ref
www.samhop.com.tw 7 top marking definition pdfn 5x6-8l 3906 xxxxxx product no. samhop logo pin 1 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no.(a,b,c...z) SP3906 sep,11,2014 ver 1.0
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